inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3544 description low base time constant; r bb? ? cc = 5 ps typ. high gain bandwidth product ft= 2 ghz typ. @ i e = 5ma, v ce = 10v low feedback capacitance; c re = 0.55 pf typ. applications designed for use as uhf oscillator and mixer in a tuner of a tv receiver. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 3 v i c collector current-continuous 50 ma p c collector power dissipation @t c =25 0.25 w t j junction temperature 125 t stg storage temperature range -55~125 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3544 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 10ma ; i b = 1ma 0.5 v i cbo collector cutoff current v cb = 12v; i e = 0 0.1 a h fe dc current gain i c = 5ma ; v ce = 10v 50 250 f t current-gain?bandwidth product i e = -5ma ; v ce = 10v 1.3 2.0 ghz c re feedback capacitance i e = 0 ; v cb = 10v;f= 1.0mhz 0.55 1.0 pf r bb? ? c c base time constant v ce = 10v,i e = -5ma,f = 31.9 mhz 5 15 ps ? h fe classifications marking m l k h fe 50-100 70-140 120-250 isc website www.iscsemi.cn 2
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3544 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3544 s-parameter v ce = 10 v, i c = 5 ma , z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. an g. mag. ang. mag. ang. 200 0.423 -78.0 7.244 107.7 0.047 64.7 0.780 -21.6 400 0.244 -107.9 3.756 84.2 0.062 58.8 0.744 -24.2 600 0.196 -131.7 2.686 69.2 0.088 58.0 0.721 -31.5 800 0.187 -154.3 2.037 55.8 0.099 56.7 0.718 -40.0 1000 0.175 -171.7 1.784 44. 9 0.124 58.2 0.726 -49.6 1200 0.171 166.5 1.428 36.1 0.149 58.0 0.756 -58.9 1400 0.174 147.7 1.308 26.2 0.179 57.2 0.774 -67.2 1600 0.204 129.8 1.105 15.6 0.203 56.7 0.742 -75.7 v ce = 10 v, i c = 10 ma , z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. an g. mag. ang. mag. ang. 200 0.281 -100.6 8.206 98.9 0.060 74.9 0.712 -21.5 400 0.220 -128.0 4.067 79.0 0.650 65.6 0.712 -22.6 600 0.218 -151.2 2.892 65.6 0.088 62.0 0.708 -29.8 800 0.181 -172.8 2.175 53.4 0.101 62.2 0.694 -38.6 1000 0.182 169.5 1.882 43.0 0.131 61.6 0.711 -48.0 1200 0.190 150.8 1.503 34.6 0.154 61.9 0.732 -58.1 1400 0.202 133.4 1.370 24.4 0.187 62.3 0.761 -66.6 1600 0.241 120.0 1.150 14.7 0.208 62.1 0.735 -74.9 isc website www.iscsemi.cn 4
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